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Download Previous Year Diploma Solved Question Paper of Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper

Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper

                                      SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. An ideal current source has _______ internal resistance.
b. JFET stand for _____________ .
c. LED stand for _______________ .
d. The emitter of a transistor is ___________ doped.
e. Photo diode is optimized for its sensitivity to _____________ .
f. _____________ diode is used as voltage regulator.
g. In a bipolar transistor there are ___________ PN junctions.
h. A semi conductor has __________ coefficient of resistance.
i. The best biasing is achieved by __________ biasing circuit.
j. The point of intersection of dc and ac load line is called _____________ .
k. The ideal value of stability factor is __________.
l. In the saturation region of a transistor both the junctions are ____________ .
m. __________ diode has negative resistance.
n. A bridge rectifier is not suitable for ___________ voltage rectification.
o. The process of adding the impurity to an intrinsic semi conductor is called _____________

                                      SECTION-B

Q2. Attempt any SIX questions.                                                                    6×5=30

a. What is avalanche breakdown?
b. Explain why a transistor should be biased?
c. What is a varactor diode? Explain its applications.
d. What is the need of multistage amplifier?
e. Explain intrinsic and extrinsic semiconductor.
f. Distinguished between FET and BJT.
g. What do you mean by Constant voltage source?
h. Silicon is preferred over germanium, why?

                                     SECTION-C

Q3. Attempt any three questions.                                                       3×10=30

Q3. Explain the behavior of PN junction in forward and reverse biased condition.
Q4. Draw the circuit diagram of a single stage transistor amplifier and explain the function of each component.
Q5. Draw the circuit diagram of a full wave bridge rectifier and explain its working.
Q6. Describe various coupling used in multistage amplifiers. What is the need of coupling network?
Q7. Explain the construction, operation and characteristics of MOSFET in depletion mode.

Electronics-1 May 2017 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper

                                      SECTION-A

Q1. Fill in the blanks.                                                      10×1.5=15

a. An ideal current source has Infinity internal resistance.
b. JFET stand for  Junction Field Effect Transistor .
c. LED stand for Light Emiting Diode .
d. The emitter of a transistor is Highly doped.
e. Photo diode is optimized for its sensitivity to _____________ .
f. Zener diode is used as voltage regulator.
g. In a bipolar transistor there are Two PN junctions.
h. A semi conductor has Negative coefficient of resistance.
i. The best biasing is achieved by Potential or Volatge Divider biasing circuit.
j. The point of intersection of dc and ac load line is called Q-point Operating Point .
k. The ideal value of stability factor is Zero .
l. In the saturation region of a transistor both the junctions are Forward Biased .
m. IMPATT diode has negative resistance.
n. A bridge rectifier is not suitable for ___________ voltage rectification.
o. The process of adding the impurity to an intrinsic semi conductor is called Doping .

Electronics-1 May 2017 3RD Sem Electrical Engineer
ing Diploma Paper


Get Started

https://www.youtube.com/watch?v=y_wJffQkeWo&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=6&t=0shttps://www.youtube.com/watch?v=mV41CMWonN4&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=7&t=0shttps://www.youtube.com/watch?v=M_RR6LVICp0&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=20&t=0shttps://www.youtube.com/watch?v=3BNQLUnbNpYhttps://www.youtube.com/watch?v=ZDkyNOzoG8A&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=8&t=0shttps://www.youtube.com/watch?v=s0LVPE0Q3LE&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=14&t=0s

Section a Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper

An ideal current source has _______ internal resistance.

An ideal current source has Infinity internal resistance.

JFET stand for _____________ .

JFET stand for  Junction Field Effect Transistor .

 LED stand for _______________ .

LED stand for Light Emiting Diode .

The emitter of a transistor is ___________ doped.

The emitter of a transistor is Highly doped.

 Photo diode is optimized for its sensitivity to _____________ .

Photo diode is optimized for its sensitivity to _____________ .

 _____________ diode is used as voltage regulator.

Zener diode is used as voltage regulator. 

In a bipolar transistor there are ___________ PN junctions.

In a bipolar transistor there are Two PN junctions.

A semi conductor has __________ coefficient of resistance.

A semi conductor has Negative coefficient of resistance.

The best biasing is achieved by __________ biasing circuit.

The best biasing is achieved by Potential or Volatge Divider biasing circuit.

The point of intersection of dc and ac load line is called _____________ .

The point of intersection of dc and ac load line is called Q-point Operating Point .

The ideal value of stability factor is __________.

The ideal value of stability factor is Zero .

In the saturation region of a transistor both the junctions are ____________ .

In the saturation region of a transistor both the junctions are Forward Biased .

 __________ diode has negative resistance.

IMPATT diode has negative resistance.

A bridge rectifier is not suitable for ___________ voltage rectification.

A bridge rectifier is not suitable for ___________ voltage rectification.

The process of adding the impurity to an intrinsic semi conductor is called  _____________

The process of adding the impurity to an intrinsic semi conductor is called Doping .

Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper Click Here

Section B :Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Paper

What is avalanche breakdown?

Avalanche breakdown.

Explain why a transistor should be biased?

Why a transistor should be biased.

What is a varactor diode? Explain its applications.

Varactor diode and its applications.

What is the need of multistage amplifier?

Need of multistage amplifier.

Explain intrinsic and extrinsic semiconductor.

Intrinsic and extrinsic semiconductor.

Distinguished between FET and BJT.

Distinguished between FET and BJT.

What do you mean by Constant voltage source?

Constant voltage source.

Silicon is preferred over germanium, why?

Silicon is preferred over germanium.

Electronics-1 May 2017 3RD Sem Electrical Engineering Diploma Solved Paper Click Here

Electronics-1 May 2017 3RD Sem Electrical Engineer
ing Diploma Paper


Get Started

https://www.youtube.com/watch?v=UHX6f8TIvX8https://www.youtube.com/watch?v=M_RR6LVICp0https://www.youtube.com/watch?v=mV41CMWonN4https://www.youtube.com/watch?v=s0LVPE0Q3LE&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=14&t=0s

Section c :-Electronics-1 May 2019 3RD Sem Electrical Engineering Diploma Paper

Explain the behavior of PN junction in forward and reverse biased condition.

Behavior of PN junction in forward and reverse biased condition.

Draw the circuit diagram of a single stage transistor amplifier and explain the function of each component.

Single stage transistor amplifier .

Draw the circuit diagram of a full wave bridge rectifier and explain its working.

Circuit diagram of a full wave bridge rectifier and its working.

Describe various coupling used in multistage amplifiers. What is the need of coupling network?

Various coupling used in multistage amplifiers.

Need of coupling network?

Explain the construction, operation and characteristics of MOSFET in depletion mode.

Construction, operation and characteristics of MOSFET in depletion mode.

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