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BASIC ELECTRONICS 2nd SEM
EXAM/ECE/CSE/IT/EEE/0664/Nov 2016

Q1. Do as directed.                                                                                                                      15×1=15

  1. Valence electrons are present in Outermost orbit of an atom.
  2. The process of adding impurity to an intrinsic semiconductor is called Doping.
  3. The value of knee voltage for silicon diode is 0.7 V
  4. Zener diode is made to operate in Zener Breakdown Region.
  5. The maximum efficiency of full- wave rectifier is 81.2 %.
  6. A transistor contains Two  PN Junction.
  7. An ideal value of stability factor is Zero.
  8. The point of intersection of DC and AC load line is Operating Point .
  9. FET stands for Field Effect Transistor.
  10. FET is a Uni Polar Device.
  11. PIV Stands for Peak Inverse Voltage .
  12. The Potential biasing is most widely used.
  13. The emitter of a transistor is doped Heavily.
  14. The minority carriers in N type semiconductors are Holes.
  15. MOSFET has Three terminals.

              SECTION-B

Q2. Attempt any five questions.                                                                    5×6=30

  1. Define doping .
  2. Write a note on Zener
  3. Why a bridge rectifier is preferred over a center-tap full wave rectifier?
  4. Explain the working of PNP transistor with .
  5. Write a note on stabilization and what is its
  6. Write down the significance of h-parameters.
  7. Distinguish between FET and

     SECTION-C

Q3. Attempt any three questions.                                                       3×10=30

  1. Draw and explain the V-I characteristics of PN junction
  2. Draw and explain the Common Emitter
  3. Explain potential divider bias circuit with
  4. Explain the circuit diagram of single stage transistor
  5. Explain the construction and operation of

BASIC ELectronics be may 2018 DIPLOMA PAPER SOLUTION


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Section a FILL IN THE BLANKS be paper

N-type semiconductors are formed by adding ______ Impurity to a Pure Semiconductor

Pentavalent Impurity

In Intrinsic semiconductors number of electrons are  to number of
Conduction in P-type semiconductor is due to movement of _____.

Holes

Value of knee voltage for silicon diode is ____.

0.7 V

A Photodiode is optimized for its sensitivity to
Zener diode is made to operate in _____ Region

Zener Breakdown Region

A transistor contains______PN Junction

Two

The gain stability of an amplifier circuit can be improved by using ____.

Negative Feedback

The value of collector current of a transistor is ____ to emitter Current.

Always Less than

In transistor, leakage current mainly depends on _______.

Temperature

The ideal value of stability factor is ____.

one

FET is a _____ terminal semiconductor

Three

MOSFET stands for __________

Metal  Oxide Filed Effect Transister

When both the junctions of a transistor are forward biased, it is said to be in _______________ Region

Saturation Region

Basic Electronics PSBTE Diploma Solved Paper May 2017.Download Previous Year Basic Electronics 2nd Sem Semester ECE ,CSE Question Paper Solution Click Here

Section B : BE PAPER MAY 2018 PAPER

Explain Intrinsic and Extrinsic Semiconductor with Suitable Diagram ?

Intrinsic and Extrinsic Semi-conductor Click Here.

What is Zener diode? Draw its symbol and explain its characteristics.

What is Zener diode? Draw its symbol and characteristics 

Explain the Working of Half Wave Rectifier

Working of Half wave Rectifier click here

Explain the working of NPN Transistor ?

Working of NPN Transistor Click Here

Difference Between FET and BJT ?
h-Parameters (hybrid Parameter) of transistors ?

hybrid Parameter) of transistor

In what way the temperature variations affect the operating point of a transistor?

Temperature variations affect the operating point of a transistor 

Explain the Phase reversal of output voltage with respect to input voltage in an Amplifier ?

Phase reversal of output voltage with respect to input voltage in an Amplifier 

Basic Electronics PSBTE Diploma Solved Paper May 2017 Solution Click Here

BASIC ELECTRONICS DIPLOMA MAY 2018 PAPER


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https://www.youtube.com/watch?v=UHX6f8TIvX8https://www.youtube.com/watch?v=M_RR6LVICp0https://www.youtube.com/watch?v=mV41CMWonN4https://www.youtube.com/watch?v=s0LVPE0Q3LE&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=14&t=0s

Section c solved bee paper

Needs of filter ? Explain π (Pi) filter

Need of Filter    Pi Filter Click Here

Derive an expression for amplification factor (β) of common emitter configuration ?

Full Wave common emitter configuration

Explain the divider method of biasing for transistor (CE)

Divider method of Biasing

Input and Output Characteristics of CE configuration of a Transistor ?

CE configuration of a Transistor Click Here

Concept of CMOS,Advantages and Application ?

CMOS Full Detials

Concept of Bipolar Transistor Symbol of BJT

Concept of Bipolar transistor

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