Download Previous Year Diploma Solved Question Paper of Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Paper
Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Paper
SECTION-A
Q1. Fill in the blanks. 10×1.5=15
a. In P-type semiconductors, the minority carriers are _______________
b. A MOSFET has ___________ terminals.
c. An ideal Voltage source has __________ internal resistance.
d. Zener diode is made to operate in ____________ region.
e. In a transistor, base is made very ___________ .
f. The three terminals of a transistor are base and ____________
g. The polarity of diode terminals can be checked by ___________
h. A single stage amplifier contains _________ transistors
i. In an amplifier, power gain= current gain * _______ gain
j. For power amplification mostly ____________ coupling is used.
SECTION-B
Q2. Attempt any FIVE questions. 5×6=30
i. Explain what you mean by constant current source.
ii. What is a transformer? Mention important applications of transformer.
iii. What is a tunnel diode? Draw its symbol and explain its Characteristics.
iv. What do you mean by h-parameters of transistor? Explain.
v. Explain with suitable diagram intrinsic and extrinsic semiconductors.
vi. Differentiate between dc and ac load line.
vii. Explain the term biasing. Why a transistor should be biased?
SECTION-C
Q3. Attempt any three questions. 3×10=30
a. Draw the circuit diagram of transformer coupled amplifier and explain its working and frequency response.
b. Explain the output characteristics of CE transistor. Indicate the three operating regions over it.
c. With the help of diagram and waveform, explain the working of full wave bridge rectifier. Also write its advantages and disadvantages.
d. Draw construction details of JFET and explain why FET is called voltage controlled device?
e. Describe the following filter circuits
i. Shunt capacitor filter
ii. Series inductor filter
iii. Choke input LC filter
Electronics-1 May 2018 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper
SECTION-A
Q1. Fill in the blanks. 10×1.5=15
a. In P-type semiconductors, the minority carriers are Electrons.
b. A MOSFET has Three terminals.
c. An ideal Voltage source has Zero internal resistance.
d. Zener diode is made to operate in Breadown region.
e. In a transistor, base is made very lightly Doped.
f. The three terminals of a transistor are base and Emiiter,Collector
g. The polarity of diode terminals can be checked by Multimeter .
h. A single stage amplifier contains One transistors
i. In an amplifier, power gain= current gain * Voltage gain
j. For power amplification mostly Transfromer coupling is used.
Electronics-1 May 2018 3RD Sem Electrical Engineer
ing Diploma Paper
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Section a Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Paper
The electronics components which can process the signal are called ________ components.
In P-type semiconductors, the minority carriers are Electrons .
A MOSFET has ____________ terminals.
A MOSFET has Three terminals.
An ideal Voltage source has _________ internal resistance.
An ideal Voltage source has Zero internal resistance.
Zener diode is made to operate in ____________ region.
Zener diode is made to operate in Breakdown region.
The _________ command is used to modify the information stored in a table.
In a transistor, base is made very Lightly Doped
The three terminals of a transistor are base and __________________
The three terminals of a transistor are base and Emiiter ,Collector .
The polarity of diode terminals can be checked by ___________
The polarity of diode terminals can be checked by Multimeter .
The ___________ Coupling is used for audio signal amplification in multi stage amplifiers.
A single stage amplifier contains One transistors
In an amplifier, power gain= current gain * _______ gain
In an amplifier, power gain= current gain * Voltage gain
For power amplification mostly ___________ coupling is used.
For power amplification mostly Transformer coupling is used.
Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Paper Click Here
Section B :Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Paper
Explain what you mean by constant current source.
Explain Constant current source.
What is a transformer? Mention important applications of transformer.
Transformer and applications of transformer.
What is a tunnel diode? Draw its symbol and explain its Characteristics.
Tunnel diode ,symbol and its Characteristics.
What do you mean by h-parameters of transistor? Explain.
h-parameters of transistor.
Explain with suitable diagram intrinsic and extrinsic semiconductors.
Intrinsic and extrinsic semiconductors.
Differentiate between dc and ac load line.
Differentiate between dc and ac load line.
Explain the term biasing. Why a transistor should be biased?
Biasing.
Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Solved Paper Click Here
Electronics-1 May 2018 3RD Sem Electrical Engineer
ing Diploma Paper
Get Started
https://www.youtube.com/watch?v=UHX6f8TIvX8https://www.youtube.com/watch?v=M_RR6LVICp0https://www.youtube.com/watch?v=mV41CMWonN4https://www.youtube.com/watch?v=s0LVPE0Q3LE&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=14&t=0s
Section c :-Electronics-1 May 2018 3RD Sem Electrical Engineering Diploma Paper
Circuit diagram of transformer coupled amplifier.
Explain the output characteristics of CE transistor. Indicate the three operating regions over it.
Output characteristics of CE transistor.
With the help of diagram and waveform, explain the working of full wave bridge rectifier.
Explain the working of full wave bridge rectifier.
Draw construction details of JFET and explain why FET is called voltage controlled device?
Construction details of JFET
Explain why FET is called voltage controlled device.
Describe Shunt capacitor filter
Describe Shunt capacitor filter
Series inductor filter
Choke input LC filter
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