Download Previous Year Diploma Solved Question Paper of Electronics-1 Dec 2018 3RD Sem Electrical Engineering Diploma Paper
Electronics-1 Dec 2018 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper
                   SECTION-A
Q1. Fill in the blanks.                           10×1.5=15
a. The electronic components which cannot process the signal are called __________ .
b. The process of adding impurities in intrinsic semiconductor material is called _________.
c. Resistivity of a semiconductor lies between ________ .
d. The value of knee voltage for silicon diode is ________ volts.
e. An ideal diode has __________ reverse resistance.
f. A zener diode is always operated in the ________ region.
g. __________ Diode has a negative resistance.
h. In a transistor, there are _______ pn junctions.
i. The emitter of a transistor is ____________ doped.
j. The biasing circuit which gives best stability to the Q point is ________ .
k. The ideal value of stability factor is ________ .
l. A transistor with its associated circuitry for amplification is called a _______.
m. In an amplifier, power gain = current gain x ________gain.
n. The point at which DC and AC load lines interact each other is called ___________.
o. A FET has three terminals namely; source, drain and ____________.
                   SECTION-B
Q2. Attempt any FIVE questions.                                  5×6=30
i. What are practical and ideal current and voltage sources?
ii. List the main differences between intrinsic and extrinsic semiconductors?
iii. Draw and explain V-I characteristics of P-N junction diode.
iv. What is the use of filter circuit? List different types of filters.
v. What do you mean by Saturation, Cut-off and Active regions?
vi. What are different types of couplings used in transistor amplifier?
vii. Write advantages and disadvantages of FET.
                   SECTION-C
Q3. Attempt any three questions.                            3×10=30
a. With the help of circuit diagram and waveforms, explain the functioning of a full-wave rectifier.
b. Explain zener diode, its characteristics and applications.
c. Draw and explain the circuit of common-emitter configuration of transistor and its characteristics.
d. Describe the construction, operation and characteristics of FET with suitable diagrams
Electronics-1 Dec 2018 3RD Sem Electrical Engineering Solved PSBTE Diploma Paper
                   SECTION-A
Q1. Fill in the blanks.                           10×1.5=15
a. The electronic components which cannot process the signal are called Passive Linear Circuit Elements .
b. The process of adding impurities in intrinsic semiconductor material is called Doping.
c. Resistivity of a semiconductor lies between Condctor and Insulator .
d. The value of knee voltage for silicon diode is 0.7 volts.
e. An ideal diode has Infinite reverse resistance.
f. A zener diode is always operated in the Breakdown region.
g. IMPATT Diode has a negative resistance.
h. In a transistor, there are Two pn junctions.
i. The emitter of a transistor is Highly doped.
j. The biasing circuit which gives best stability to the Q point is Potential Divider Biasing .
k. The ideal value of stability factor is Zero.
l. A transistor with its associated circuitry for amplification is called a ______.
m. In an amplifier, power gain = current gain x Voltage gain.
n. The point at which DC and AC load lines interact each other is called Q-Point .
o. A FET has three terminals namely; source, drain and Gate .
Electronics-1 DEC 2018 3RD Sem Electrical Engineer ing Diploma Paper
Get StartedSection a Electronics-1 DEC 2018 3RD Sem Electrical Engineering Diploma Paper
The electronic components which cannot process the signal are called _________The electronic components which cannot process the signal are called Passive Linear Circuit Elements .
The process of adding impurities in intrinsic semiconductor material is called _________The process of adding impurities in intrinsic semiconductor material is called Doping.
Resistivity of a semiconductor lies between _________ and ___________Resistivity of a semiconductor lies between Condctor and Insulator .
The value of knee voltage for silicon diode is ____ volts.The value of knee voltage for silicon diode is 0.7 volts.
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An ideal diode has I_______ reverse resistance.An ideal diode has Infinite reverse resistance.
A zener diode is always operated in the Breakdown region.
IMPATT Diode has a negative resistance.
In a transistor, there are Two pn junctions.
The emitter of a transistor is Highly doped.
The biasing circuit which gives best stability to the Q point is Potential Divider Biasing .
The ideal value of stability factor is Zero.
A transistor with its associated circuitry for amplification is called a ______.
In an amplifier, power gain = current gain x Voltage gain.
The point at which DC and AC load lines interact each other is called Q-Point .
.
A FET has three terminals namely; source, drain and Gate
Electronics-1 Dec 2018 3RD Sem Electrical Engineering Diploma Paper Click Here
Section B :Electronics-1 dec 2018 3RD Sem Electrical Engineering Diploma Paper
What are practical and ideal current and voltage sources?Practical and ideal current and voltage sources.
Main differences between intrinsic and extrinsic semiconductors.
V-I characteristics of P-N junction diode.
Use of filter circuit.
List different types of filters.
Saturation, Cut-off and Active regions.
Different types of couplings used in transistor amplifier.
Advantages and disadvantages of FET.
Electronics-1 Dec 2018 3RD Sem Electrical Engineering Diploma Solved Paper Click Here
Electronics-1 dec 2018 3RD Sem Electrical Engineer ing Diploma Paper
Get Started https://www.youtube.com/watch?v=UHX6f8TIvX8https://www.youtube.com/watch?v=M_RR6LVICp0https://www.youtube.com/watch?v=mV41CMWonN4https://www.youtube.com/watch?v=s0LVPE0Q3LE&list=PLA9Q9SDZ781WXNAWit379A4CRLMvjGiUw&index=14&t=0sSection c :-Electronics-1 dec 2018 3RD Sem Electrical Engineering Diploma Paper
With the help of circuit diagram and waveforms, explain the functioning of a full-wave rectifier.Circuit diagram and waveforms of a full-wave rectifier.
Zener diode, characteristics and applications.
Common-emitter configuration of transistor and its characteristics.
Construction, operation and characteristics of FET.
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