Basic Electronics Diploma EEE/CSE/ Dec 2016 Paper Psbte Paper

BASIC ELECTRONICS 2nd SEM
EXAM/ECE/CSE/IT/EEE/0664/Dec 2016

BASIC ELECTRONICS 2nd SEM EXAM/CSE/IT/EEE/0664/Dec 2016 SECTION-A

Q1. Do as directed. 15×1=15

Valence electrons are present in Outermost orbit of an atom.
The process of adding impurity to an intrinsic semiconductor is called Doping .
The value of knee voltage for silicon diode is 0.7 Volt
Zener diode is made to operate in Zener Breakdown Region.
The maximum efficiency of full- wave rectifier is 81.2 %
A transistor contains Two (2) PN Junction.
An ideal value of stability factor is Zero.
The point of intersection of DC and AC load line is Q-Point.
FET stands for Field Effect Transistor.
FET is a Uni Polar Device.
PIV Stands for Peak Inverse Voltage.
The Potential Divider biasing is most widely used.
The emitter of a transistor is doped Highly .
The minority carriers in N type semiconductors are Holes.
MOSFET has Three terminals.

SECTION-B

Q2. Attempt any five questions. 5×6=30

Define doping ?
Write a note on Zener Diode ?
Why a Bridge rectifier is preferred over a center-tap full wave rectifier?
Explain the working of PNP transistor with diagram ?
Write a note on stabilization and what is its Need ?
Write down the significance of h-parameters.
Distinguish between FET and BJT ?

SECTION-C

Q3. Attempt any three questions. 3×10=30

Draw and explain the V-I characteristics of PN junction ?
Draw and explain the Common Emitter Characteristics ?
Explain Potential Divider Bias Circuit with diagram ?
Explain the circuit diagram of single stage transistor amplifier ?
Explain the construction and operation of FET ?

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Section a FILL IN THE BLANKS be paper

Valence electrons are present in _____ orbit of an atom.

Outermost

The process of adding impurity to an intrinsic semiconductor is called ____

Doping

Value of knee voltage for silicon diode is

0.7 Volt

A transistor contains ____ PN Junction

Two (2)

Maximum Efficiency of full- wave rectifier is ____

81.2 %

Zener diode is made to operate in _______ Region

Zener Breakdown Region

An ideal value of stability factor is ____

Zero

Point of intersection of DC and AC load line is ___

Q-Point

FET stands for _____

Field Effect Transistor

FET is a ___ Polar Device.

Uni

PIV Stands for _____

Peak Inverse Voltage

_____ biasing is most widely used

The Potential Divider

Emitter of a Transistor is doped ____

Highly

The minority carriers in N type semiconductors are ____

Holes

MOSFET has ____ terminals.

Three

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Section B : BE PAPER MAY 2018 PAPER

Define doping ?

Doping

Write a note on Zener Diode ?

Zener Diode

Why a Bridge rectifier is preferred over a center-tap full wave rectifier?

Working of Half wave Rectifier click here

Explain the Working of PNP transistor with Diagram ?
Write a note on stabilization and what is its need.
Write down the significance of h-parameters.

hybrid Parameter) of transistor

Distinguish between FET and BJT ?

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